IndiumV3, Main, Repository, bibRecord, 000143

Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium

Identifieur interne : 000143 ( Main/Repository ); précédent : 000142; suivant : 000144

Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium

Auteurs : RBID : Pascal:14-0090038

Descripteurs français

Pascal (Inist)
- Propriété électrique, Propriété optique, Couche mince, Pulvérisation réactive, Dépôt physique phase vapeur, Arséniure de gallium, Semiconducteur III-V, Composé III-V, Indium, Dépôt pulvérisation, Diffraction électron, Effet Hall, Conductivité électrique, Densité porteur charge, Bande interdite, Propriété électronique, Effet concentration, Effet de Burstein Moss, Porteur libre, Rayonnement IR proche, Masse effective, Résonance, Résistivité électrique, Transparence, Facteur réflexion, Spectre réflexion, Dispositif photovoltaïque, Miroir, Nitrure d'indium, Nitrure de gallium, Pulvérisation irradiation, InxGa1-xN, 7350, 7866, 8115C, 8105E, Dispositif photonique.

English descriptors

KwdEn :
- Burstein Moss effect, Carrier density, Effective mass, Electric resistivity, Electrical conductivity, Electrical properties, Electron diffraction, Electronic properties, Energy gap, Free carrier, Gallium arsenides, Gallium nitride, Hall effect, III-V compound, III-V semiconductors, Indium, Indium nitride, Mirrors, Near infrared radiation, Optical properties, Photonic device, Photovoltaic cell, Physical vapor deposition, Quantity ratio, Reactive sputtering, Reflection spectrum, Reflectivity, Resonance, Sputter deposition, Sputtering, Thin films, Transparency.

Abstract

Thin films of In_xGa_1-xN alloys were deposited by reactive sputtering using a GaAs target, covered partially with indium and co-sputtered with nitrogen. X-ray and electron diffraction studies indicate the formation of single phase In_xGa_1-xN films at ˜500 °C. Hall effect and resistivity measurements show that the alloy films with x > 0.5 have high carrier concentrations in the range of 10²⁰-10²¹ cm^-3 and mobility of ˜10 cm² V^-1 S^-1. Optical measurements of the alloy films show a strong dependence of the band gap on carrier concentration, which is attributed to the Burstein-Moss shift and free carrier effects in the near-infrared region. The values of electron effective mass obtained from plasma resonance data and the Burstein-Moss shift show good agreement. Over a limited composition window of x in the range of 0.5-0.6, the alloy films exhibit low electrical resistivity (≃10^-3 Ω-cm) and high transparency in part of the visible and near infrared regions, followed by high reflectance in the infrared region, which show their potential for applications as transparent electrodes in photovoltaic and photonic devices and as heat mirrors.

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Links to Exploration step

Pascal:14-0090038

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and optical properties of transparent conducting In<sub>x</sub>
Ga<sub>1-x</sub>
N alloy films deposited by reactive co-sputtering of GaAs and indium</title>
<author><name sortKey="Yadav, Brajesh S" uniqKey="Yadav B">Brajesh S. Yadav</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Indian Institute of Technology Bombay</s1>
<s2>Mumbai 400076</s2>
<s3>IND</s3>
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<sZ>4 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Mumbai 400076</wicri:noRegion>
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</author>
<author><name sortKey="Mohanta, P" uniqKey="Mohanta P">P. Mohanta</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay</s1>
<s2>Mumbai 400076</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Mumbai 400076</wicri:noRegion>
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</author>
<author><name sortKey="Srinivasa, R S" uniqKey="Srinivasa R">R. S. Srinivasa</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay</s1>
<s2>Mumbai 400076</s2>
<s3>IND</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Mumbai 400076</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Major, S S" uniqKey="Major S">S. S. Major</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Indian Institute of Technology Bombay</s1>
<s2>Mumbai 400076</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Mumbai 400076</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0090038</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0090038 INIST</idno>
<idno type="RBID">Pascal:14-0090038</idno>
<idno type="wicri:Area/Main/Corpus">000054</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Burstein Moss effect</term>
<term>Carrier density</term>
<term>Effective mass</term>
<term>Electric resistivity</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Electron diffraction</term>
<term>Electronic properties</term>
<term>Energy gap</term>
<term>Free carrier</term>
<term>Gallium arsenides</term>
<term>Gallium nitride</term>
<term>Hall effect</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>Indium nitride</term>
<term>Mirrors</term>
<term>Near infrared radiation</term>
<term>Optical properties</term>
<term>Photonic device</term>
<term>Photovoltaic cell</term>
<term>Physical vapor deposition</term>
<term>Quantity ratio</term>
<term>Reactive sputtering</term>
<term>Reflection spectrum</term>
<term>Reflectivity</term>
<term>Resonance</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Thin films</term>
<term>Transparency</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term>
<term>Propriété optique</term>
<term>Couche mince</term>
<term>Pulvérisation réactive</term>
<term>Dépôt physique phase vapeur</term>
<term>Arséniure de gallium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Indium</term>
<term>Dépôt pulvérisation</term>
<term>Diffraction électron</term>
<term>Effet Hall</term>
<term>Conductivité électrique</term>
<term>Densité porteur charge</term>
<term>Bande interdite</term>
<term>Propriété électronique</term>
<term>Effet concentration</term>
<term>Effet de Burstein Moss</term>
<term>Porteur libre</term>
<term>Rayonnement IR proche</term>
<term>Masse effective</term>
<term>Résonance</term>
<term>Résistivité électrique</term>
<term>Transparence</term>
<term>Facteur réflexion</term>
<term>Spectre réflexion</term>
<term>Dispositif photovoltaïque</term>
<term>Miroir</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>Pulvérisation irradiation</term>
<term>InxGa1-xN</term>
<term>7350</term>
<term>7866</term>
<term>8115C</term>
<term>8105E</term>
<term>Dispositif photonique</term>
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<front><div type="abstract" xml:lang="en">Thin films of In<sub>x</sub>
Ga<sub>1-x</sub>
N alloys were deposited by reactive sputtering using a GaAs target, covered partially with indium and co-sputtered with nitrogen. X-ray and electron diffraction studies indicate the formation of single phase In<sub>x</sub>
Ga<sub>1-x</sub>
N films at ˜500 °C. Hall effect and resistivity measurements show that the alloy films with x > 0.5 have high carrier concentrations in the range of 10<sup>20</sup>
-10<sup>21</sup>
 cm<sup>-3</sup>
 and mobility of ˜10 cm<sup>2</sup>
 V<sup>-1</sup>
 S<sup>-1</sup>
. Optical measurements of the alloy films show a strong dependence of the band gap on carrier concentration, which is attributed to the Burstein-Moss shift and free carrier effects in the near-infrared region. The values of electron effective mass obtained from plasma resonance data and the Burstein-Moss shift show good agreement. Over a limited composition window of x in the range of 0.5-0.6, the alloy films exhibit low electrical resistivity (≃10<sup>-3</sup>
 Ω-cm) and high transparency in part of the visible and near infrared regions, followed by high reflectance in the infrared region, which show their potential for applications as transparent electrodes in photovoltaic and photonic devices and as heat mirrors.</div>
</front>
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Ga<sub>1-x</sub>
N alloy films deposited by reactive co-sputtering of GaAs and indium</s1>
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<fA11 i1="01" i2="1"><s1>YADAV (Brajesh S.)</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay</s1>
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<sZ>3 aut.</sZ>
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<fA15 i1="01"><s1>Physics Dpt. Univ. of Crete, Voutes</s1>
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<fC01 i1="01" l="ENG"><s0>Thin films of In<sub>x</sub>
Ga<sub>1-x</sub>
N alloys were deposited by reactive sputtering using a GaAs target, covered partially with indium and co-sputtered with nitrogen. X-ray and electron diffraction studies indicate the formation of single phase In<sub>x</sub>
Ga<sub>1-x</sub>
N films at ˜500 °C. Hall effect and resistivity measurements show that the alloy films with x > 0.5 have high carrier concentrations in the range of 10<sup>20</sup>
-10<sup>21</sup>
 cm<sup>-3</sup>
 and mobility of ˜10 cm<sup>2</sup>
 V<sup>-1</sup>
 S<sup>-1</sup>
. Optical measurements of the alloy films show a strong dependence of the band gap on carrier concentration, which is attributed to the Burstein-Moss shift and free carrier effects in the near-infrared region. The values of electron effective mass obtained from plasma resonance data and the Burstein-Moss shift show good agreement. Over a limited composition window of x in the range of 0.5-0.6, the alloy films exhibit low electrical resistivity (≃10<sup>-3</sup>
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<s5>03</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Reactive sputtering</s0>
<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s2>NK</s2>
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<s2>NK</s2>
<s5>06</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s2>NC</s2>
<s5>09</s5>
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<s2>NC</s2>
<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Electron diffraction</s0>
<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>14</s5>
</fC03>
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<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Propriété électronique</s0>
<s5>30</s5>
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<s5>30</s5>
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<s5>30</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>Effet concentration</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Quantity ratio</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Effet de Burstein Moss</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Burstein Moss effect</s0>
<s5>32</s5>
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<fC03 i1="18" i2="X" l="SPA"><s0>Efecto Burstein Moss</s0>
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<fC03 i1="20" i2="3" l="FRE"><s0>Rayonnement IR proche</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Near infrared radiation</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Masse effective</s0>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Effective mass</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Résonance</s0>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Resonance</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>37</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Transparence</s0>
<s5>38</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Transparency</s0>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Facteur réflexion</s0>
<s5>39</s5>
</fC03>
<fC03 i1="25" i2="3" l="ENG"><s0>Reflectivity</s0>
<s5>39</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Spectre réflexion</s0>
<s5>40</s5>
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<fC03 i1="26" i2="X" l="ENG"><s0>Reflection spectrum</s0>
<s5>40</s5>
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<s5>40</s5>
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<s5>41</s5>
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<s5>41</s5>
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<fC03 i1="27" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0>
<s5>41</s5>
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<s5>42</s5>
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<fC03 i1="28" i2="3" l="ENG"><s0>Mirrors</s0>
<s5>42</s5>
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<fC03 i1="29" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>43</s5>
</fC03>
<fC03 i1="29" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>43</s5>
</fC03>
<fC03 i1="29" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>43</s5>
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<fC03 i1="30" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>44</s5>
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<fC03 i1="30" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>44</s5>
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<fC03 i1="30" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>44</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>45</s5>
</fC03>
<fC03 i1="31" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>45</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>InxGa1-xN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="33" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="34" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="35" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="36" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fC03 i1="37" i2="3" l="FRE"><s0>Dispositif photonique</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="37" i2="3" l="ENG"><s0>Photonic device</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="37" i2="3" l="SPA"><s0>Dispositivo fotónico</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>118</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>TCM2012 International Symposia on Transparent Conductive Materials</s1>
<s3>Hersonissos, Crete GRC</s3>
<s4>2012-10-25</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium
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Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium

Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium

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